SMF20N65-Z Datasheet | HUAKE

Features ： - 20.0A, 650V, RDS(on)(Typ) =380mΩ@VGS=10V - Low Gate Charge - Low Crss - 100% Avalanche Tested - Fast Switching - Improved dv/dt Capability - Application: - High Frequency Switching Mode Power Supply - Active Power Factor Correction Absolute Maximum Ratings(Tc=25C unless otherwise noted) Symbol Parameter VDSS Drain-Source Voltage Drain Current - Continuous(Tc=25C) - Continuous(Tc=100C) IDM VGSS IAR EAR dv/dt Drain Current -Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy （Limit Reference Value） Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt (Note1) (Note2) (Note1) (Note1) (Note3) Power Dissipation(TC =25C) -Derate above 25°C Tj Operating Junction Temperature Tstg Storage Temperature Range - Drain Current Limited by Maximum Junction Temperature. Value 650 20.0- 12.6- 80.0- ±30 14.0 33 4.5 74 0.59 150 -55 to+150 Thermal Characteristics Symbol Parameter RθJC Thermal Resistance,Junction to Case RθJA Thermal Resistance,Junction to...