HFH9N90
Description
These are N-Channel enhancement mode silicon gate power field effect transistors.
Key Features
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Part: HFH9N90
- Description: N-Channel Enhancement Mode Field Effect Transistor
- Category: Transistor
- Manufacturer: HUASHAN ELECTRONIC
- Size: 677.68 KB