HFH9N90 - N-Channel Enhancement Mode Field Effect Transistor

HUASHAN ELECTRONIC

General Description

These are N-Channel enhancement mode silicon gate power field effect transistors.

Key Features

s.
9A, 900V(See Note), RDS(on).

📥 Download Datasheet

HFH9N90 n-channel enhancement mode field effect transistor by HUASHAN ELECTRONIC - Datasheet Preview

Datasheet Details

Part number	HFH9N90
Manufacturer	HUASHAN ELECTRONIC
File Size	677.68 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	HFH9N90 Datasheet

Full PDF Text Transcription for HFH9N90 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HFH9N90. For precise diagrams, and layout, please refer to the original PDF.

Shantou Huashan Electronic Devices Co.,Ltd. HFH9N90 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel enhancement mode silicon ...

View more extracted text

or █ General Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode . These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge. █ Features • 9A, 900V(See Note), RDS(on) <1.

📁 Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	HFH9N90	N-Channel MOSFET	SemiHow

More Datasheets from HUASHAN ELECTRONIC

Part Number	Description
HFH12N60	N-Channel Enhancement Mode Field Effect Transistor
HFH20N50	N-Channel Enhancement Mode Field Effect Transistor
HFH7N60	N-Channel Enhancement Mode Field Effect Transistor