HFP13N10 Datasheet | HUASHAN ELECTRONIC

Shantou Huashan Electronic Devices Co.,Ltd. N-Channel Enhancement Mode Field Effect Transistor - General Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode . These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. - Features - 13A, 100V, RDS(on) <0.10Ω@VGS = 10 V - High density cell design for ultra low Rdson -...