HFP13N10 - N-Channel Enhancement Mode Field Effect Transistor

HUASHAN ELECTRONIC

General Description

These are N-Channel enhancement mode silicon gate power field effect transistors.

Key Features

s.
13A, 100V, RDS(on).

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HFP13N10 n-channel enhancement mode field effect transistor by HUASHAN ELECTRONIC - Datasheet Preview

Datasheet Details

Part number	HFP13N10
Manufacturer	HUASHAN ELECTRONIC
File Size	532.07 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	HFP13N10 Datasheet

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Shantou Huashan Electronic Devices Co.,Ltd. HFP13N10 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode . These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. █ Features • 13A, 100V, RDS(on) <0.