HFP15N06
Overview
- 15A, 60V(See Note), RDS(on) <100mVΩ@VGS = 5V
- Fast switching
- 100% avalanche tested
- Minimize input capacitance and gate charge
- Exceptional dv/dt capability
- Part: HFP15N06
- Description: N-Channel Enhancement Mode Field Effect Transistor
- Category: Transistor
- Manufacturer: HUASHAN ELECTRONIC
- Size: 352.58 KB