HFP17N10
Overview
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode .
- 17A, 100V, RDS(on) <70mΩ@VGS = 10 V
- High density cell design for ultra low Rdson
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
