HGH20N120A
Description
Collector to Emitter Voltage Gate to Emitter Voltage Ratings 1200 ±30 Units V V Collector Current（TC = 25℃） IC Collector Current（TC = 100℃） 40 20 A A ICM (1) Pulsed Collector Current 80 A IF Diode continuous Forward current （TC = 100℃） 15 A Maximum Power Dissipation（TC = PD 25℃） Maximum Power Dissipation（TC = 100℃） 200 80 W W TJ Operating Junction Temperature -55～+150 ℃ Tstg Storage Temperature Range -55～+150 ℃ Maximum.
Key Features
- Low saturation voltage, Vce(on)(typ)=2.3V@Vge=15V
- High input impedance
- Field stop trench technology offer superior
- High speed switching
Applications
- Induction heating and Microwave oven
