| Part number | IRF7343TRPBF |
|---|---|
| Datasheet | IRF7343TRPBF-HUAXUANYANG.pdf |
| File Size | 1.13 MB |
| Manufacturer | HUAXUANYANG |
| Description | Dual N+P-Channel Enhancement Mode MOSFET |
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The IRF7343TRPBF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
IRF7343TRPBF | Dual-Channel MOSFET | VBsemi |
 |
IRF7343 | HEXFET Power MOSFET | International Rectifier |
|
IRF7343PBF | HEXFET Power MOSFET | International Rectifier |
|
IRF7343QPbF | Power MOSFET | International Rectifier |
See all HUAXUANYANG datasheets
| Part Number | Description |
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