Datasheet Details
| Part number | IRF7343TRPBF |
|---|---|
| Manufacturer | HUAXUANYANG |
| File Size | 1.13 MB |
| Description | Dual N+P-Channel Enhancement Mode MOSFET |
| Datasheet |
 IRF7343TRPBF Datasheet
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General Description
The IRF7343TRPBF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.
This device is suitable for use as a Battery protection or in other Switching application.
Key Features
- VDS = 60V ID =6A RDS(ON) < 48mΩ @ VGS=10V VDS = -60V ID =-5A RDS(ON) < 85 mΩ @ VGS=-10V.