Datasheet Details
| Part number | IRF7343TRPBF |
|---|---|
| Manufacturer | HUAXUANYANG |
| File Size | 1.13 MB |
| Description | Dual N+P-Channel Enhancement Mode MOSFET |
| Datasheet | IRF7343TRPBF-HUAXUANYANG.pdf |
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Overview: HUAXUANYANG HXY ELECTRONICS CO.,LTD IRF7343TRPBF Dual N+P-Channel Enhancement Mode.
| Part number | IRF7343TRPBF |
|---|---|
| Manufacturer | HUAXUANYANG |
| File Size | 1.13 MB |
| Description | Dual N+P-Channel Enhancement Mode MOSFET |
| Datasheet | IRF7343TRPBF-HUAXUANYANG.pdf |
|
|
|
The IRF7343TRPBF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.
This device is suitable for use as a Battery protection or in other Switching application.
General
Compare IRF7343TRPBF distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
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