HY025N08B6 - N-Channel Enhancement Mode MOSFET

HUAYI

General Description

Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS.

📥 Download Datasheet

HY025N08B6 n-channel enhancement mode mosfet by HUAYI - Datasheet Preview

Datasheet Details

Part number	HY025N08B6
Manufacturer	HUAYI
File Size	1.31 MB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	HY025N08B6 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
HY030N06MF	N-Channel Enhancement Mode MOSFET	HOOYI
HY030N06P	N-Channel Enhancement Mode MOSFET	HOOYI
HY030N06PS	N-Channel Enhancement Mode MOSFET	HOOYI
HY05020GN	Power Supply	Shindengen Electric
HY05U-523	Bidirectional TVS Diode	Leiditech

Other Datasheets by HUAYI

Part Number	Description
HY030N06C2	N-Channel Enhancement Mode MOSFET
HY040N08B	N-Channel MOSFET
HY040N08P	N-Channel MOSFET
HY045N10B	N-Channel Enhancement Mode MOSFET
HY045N10P	N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

HY025N08B6 N-Channel Enhancement Mode MOSFET Feature  80V/310A RDS(ON)= 2mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen- Free and Green Devices Available (RoHS Compliant) Applications  Brushless Motor Drive  Switching application  Electric Power Steering Ordering and Marking Information Pin Description Pin7 Pin1 TO-263-6L Pin4 Pin1 Pin2,3,5,6,7 N-Channel MOSFET B6 HY025N08 YYXXXJWW G Package Code B6:TO-263-6L Date Code YYXXX WW Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.