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HY025N08B6 - N-Channel Enhancement Mode MOSFET

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Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS.

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Datasheet Details

Part number HY025N08B6
Manufacturer HUAYI
File Size 1.31 MB
Description N-Channel Enhancement Mode MOSFET
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HY025N08B6 N-Channel Enhancement Mode MOSFET Feature  80V/310A RDS(ON)= 2mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen- Free and Green Devices Available (RoHS Compliant) Applications  Brushless Motor Drive  Switching application  Electric Power Steering Ordering and Marking Information Pin Description Pin7 Pin1 TO-263-6L Pin4 Pin1 Pin2,3,5,6,7 N-Channel MOSFET B6 HY025N08 YYXXXJWW G Package Code B6:TO-263-6L Date Code YYXXX WW Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
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