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HY045N10P - N-Channel Enhancement Mode MOSFET

General Description

100V/120A RDS(ON)= 4.2mΩ(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description TO-220FB-3L TO-263-2L Applications Switch application DC/DC Converter Ord

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Datasheet Details

Part number HY045N10P
Manufacturer HUAYI
File Size 1.54 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY045N10P Datasheet

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HY045N10P/B Feature Description  100V/120A RDS(ON)= 4.2mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description TO-220FB-3L TO-263-2L Applications  Switch application  DC/DC Converter Ordering and Marking Information N-Channel MOSFET P HY045N10 YYXXXJWW G B HY045N10 YYXXXJWW G Package Code P:TO-220FB-3L Date Code YYXXX WW B:TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.