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HY050N08B - N-Channel Enhancement Mode MOSFET

Download the HY050N08B datasheet PDF. This datasheet also covers the HY050N08P variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

80V/100A RDS(ON)= 5.4mΩ(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description TO-220FB-3L TO-263-2L Applications Switch application DC/DC Converter

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Note: The manufacturer provides a single datasheet file (HY050N08P-HUAYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HY050N08B
Manufacturer HUAYI
File Size 1.28 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY050N08B Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HY050N08P/B Feature Description  80V/100A RDS(ON)= 5.4mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description TO-220FB-3L TO-263-2L Applications  Switch application  DC/DC Converter  Motor Control Ordering and Marking Information P HY050N08 XYMXXXXXX B HY050N08 XYMXXXXXX N-Channel MOSFET Package Code P:TO-220FB-3L Date Code XYMXXXXXX B:TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.