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HY050N08B - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the HY050N08B, a member of the HY050N08P N-Channel Enhancement Mode MOSFET family.

Datasheet Summary

Description

80V/100A RDS(ON)= 5.4mΩ(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description TO-220FB-3L TO-263-2L Applications Switch application DC/DC Converter

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Datasheet preview – HY050N08B

Datasheet Details

Part number HY050N08B
Manufacturer HUAYI
File Size 1.28 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY050N08B Datasheet
Additional preview pages of the HY050N08B datasheet.

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Full PDF Text Transcription

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HY050N08P/B Feature Description  80V/100A RDS(ON)= 5.4mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description TO-220FB-3L TO-263-2L Applications  Switch application  DC/DC Converter  Motor Control Ordering and Marking Information P HY050N08 XYMXXXXXX B HY050N08 XYMXXXXXX N-Channel MOSFET Package Code P:TO-220FB-3L Date Code XYMXXXXXX B:TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
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