HY0C20C Key Features
- 20V/ 12A
- High Cell Desity for low Rds(on)
- ESD Rating:2000V HBM
- Halogen Device Available
HY0C20C is Dual N-Channel Enhancement Mode MOSFET manufactured by HUAYI.
| Part Number | Description |
|---|---|
| HY025N08B6 | N-Channel Enhancement Mode MOSFET |
| HY030N06C2 | N-Channel Enhancement Mode MOSFET |
| HY040N08B | N-Channel MOSFET |
| HY040N08P | N-Channel MOSFET |
| HY045N10B | N-Channel Enhancement Mode MOSFET |
DFN6L(0203) Date Code YYXXX WW Assembly Material C : HUAYI lead -free products contain molding pounds/die attach materials and 100% matte tin plate Termination finish;which are fully pliant with RoHS. HUAYI lead -free products meet or exceed the leadFree requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.