• Part: HY0C20C
  • Description: Dual N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HUAYI
  • Size: 2.39 MB
Download HY0C20C Datasheet PDF
HUAYI
HY0C20C
Features - 20V/ 12A RDS(ON)= 9 mΩ (typ.) @ VGS=4.5 V RDS(ON)= 11.5 mΩ (typ.) @ VGS=2.5 V - High Cell Desity for low Rds(on) - ESD Rating:2000V HBM - Halogen Device Available Pin Description G2 S2 S2 D1/D2 G1 S1 S1 DFN6L(0203) Applications - Battery pack protection - Power tool , Cell phone G1 3 S1 2 S1 1 Bottom Drain Contact 4 G2 5 S2 6 S2 Dual N-Channel MOSFET Ordering and Marking Information C HY0C20 YYÿ XXXJWW C Package Code C : DFN6L(0203) Date Code YYXXX WW Assembly Material C : Green Device Note: HUAYI lead -free products contain molding pounds/die attach materials and 100% matte tin plate Termination finish;which are fully pliant with Ro HS. HUAYI lead -free products meet or exceed the lead Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed...