HY0C20C - Dual N-Channel Enhancement Mode MOSFET

Product Overview

HUAYI

Datasheet Details

Part number	HY0C20C
Manufacturer	HUAYI
File Size	2.39 MB
Description	Dual N-Channel Enhancement Mode MOSFET
Datasheet	HY0C20C Datasheet
Additional preview pages of the HY0C20C datasheet.

HY0C20C Product details

Description

G2 S2 S2 D1/D2 G1 S1 S1 DFN6L(0203) Applications Battery pack protection Power tool , Cell phone G1 3 S1 2 S1 1 Bottom Drain Contact 4 G2 5 S2 6 S2 Dual N-Channel MOSFET Ordering and Marking Information C HY0C20 YYÿ XXXJWW C Package Code C : DFN6L(0203) Date Code YYXXX WW

Features

20V/ 12A RDS(ON)= 9 mΩ (typ. ) @ VGS=4.5 V RDS(ON)= 11.5 mΩ (typ. ) @ VGS=2.5 V.
High Cell Desity for low Rds(on).
ESD Rating:2000V HBM.
Halogen Device Available Pin.

📁 Similar Datasheet

HY030N06MF - N-Channel Enhancement Mode MOSFET (HOOYI)
HY030N06P - N-Channel Enhancement Mode MOSFET (HOOYI)
HY030N06PS - N-Channel Enhancement Mode MOSFET (HOOYI)
HY05020GN - Power Supply (Shindengen Electric)
HY05U-523 - Bidirectional TVS Diode (Leiditech)
HY060N08P - N-Channel 80V MOSFET (VBsemi)

Other Datasheets by HUAYI

HY025N08B6 - N-Channel Enhancement Mode MOSFET
HY030N06C2 - N-Channel Enhancement Mode MOSFET
HY040N08B - N-Channel MOSFET
HY040N08P - N-Channel MOSFET
HY045N10B - N-Channel Enhancement Mode MOSFET
HY045N10P - N-Channel Enhancement Mode MOSFET
HY050N08B - N-Channel Enhancement Mode MOSFET
HY050N08C2 - Single N-Channel Enhancement Mode MOSFET

Published: Jul 12, 2025 |