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HY0C20C - Dual N-Channel Enhancement Mode MOSFET

General Description

G2 S2 S2 D1/D2 G1 S1 S1 DFN6L(0203) Applications Battery pack protection Power tool , Cell phone G1 3 S1 2 S1 1 Bottom Drain Contact 4 G2 5 S2 6 S2 Dual N-Channel MOSFET Ordering and Marking Information C HY0C20 YYÿ XXXJWW C Package Code C : DFN6L(0203) Date Code YYXXX WW

Key Features

  • 20V/ 12A RDS(ON)= 9 mΩ (typ. ) @ VGS=4.5 V RDS(ON)= 11.5 mΩ (typ. ) @ VGS=2.5 V.
  • High Cell Desity for low Rds(on).
  • ESD Rating:2000V HBM.
  • Halogen Device Available Pin.

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Datasheet Details

Part number HY0C20C
Manufacturer HUAYI
File Size 2.39 MB
Description Dual N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY0C20C Datasheet

Full PDF Text Transcription for HY0C20C (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HY0C20C. For precise diagrams, and layout, please refer to the original PDF.

HY0C20C Dual N-Channel Enhancement Mode MOSFET Features • 20V/ 12A RDS(ON)= 9 mΩ (typ.) @ VGS=4.5 V RDS(ON)= 11.5 mΩ (typ.) @ VGS=2.5 V • High Cell Desity for low Rds(on)...

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RDS(ON)= 11.5 mΩ (typ.) @ VGS=2.5 V • High Cell Desity for low Rds(on) • ESD Rating:2000V HBM • Halogen Device Available Pin Description G2 S2 S2 D1/D2 G1 S1 S1 DFN6L(0203) Applications • Battery pack protection • Power tool , Cell phone G1 3 S1 2 S1 1 Bottom Drain Contact 4 G2 5 S2 6 S2 Dual N-Channel MOSFET Ordering and Marking Information C HY0C20 YYÿ XXXJWW C Package Code C : DFN6L(0203) Date Code YYXXX WW Assembly Material C : Green Device Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate Termination finish;which are fully compliant with RoHS.

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