Datasheet4U Logo Datasheet4U.com

HY1603C2 - N-Channel Enhancement Mode MOSFET

General Description

D DD D D DD D SSSG GSSS Pin1 PPAK5 6-8L Applications Switching Application Power Management for DC/DC Battery Protection Ordering and Marking Information N-Channel MOSFET C2 HY1603 YYXXXJWW G Package Code C2: PPAK5 6-8L Date Code YYXXX WW Assembly Material G:Halog

📥 Download Datasheet

Datasheet Details

Part number HY1603C2
Manufacturer HUAYI
File Size 966.04 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY1603C2 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HY1603C2 Single N-Channel Enhancement Mode MOSFET Feature z 30V/60A RDS(ON)= 4.1mΩ(typ.) @VGS = 10V RDS(ON)= 5.2mΩ(typ.) @VGS = 4.5V z 100% Avalanche Tested z Reliable and Rugged z Halogen- Free Devices Available Pin Description D DD D D DD D SSSG GSSS Pin1 PPAK5*6-8L Applications  Switching Application  Power Management for DC/DC  Battery Protection Ordering and Marking Information N-Channel MOSFET C2 HY1603 YYXXXJWW G Package Code C2: PPAK5*6-8L Date Code YYXXX WW Assembly Material G:Halogen Free Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.