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HY1720P - N-Channel Enhancement Mode MOSFET

General Description

TO-220FB-3L TO-263-2L Ordering and Marking Information P HY1720 YYXXXJWWG B HY1720 YYXXXJWWG N-Channel MOSFET Package Code P :TO-220FB-3L Date Code YYXXX WW B:TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; wh

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Datasheet Details

Part number HY1720P
Manufacturer HUAYI
File Size 1.36 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY1720P Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HY1720P/B Feature  200V/64A RDS(ON)=27mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Available (RoHS Compliant) Applications  Power Switching application  Uninterruptible Power Supply N-Channel Enhancement Mode MOSFET Pin Description TO-220FB-3L TO-263-2L Ordering and Marking Information P HY1720 YYXXXJWWG B HY1720 YYXXXJWWG N-Channel MOSFET Package Code P :TO-220FB-3L Date Code YYXXX WW B:TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.