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HY3410NA2P - N-Channel Enhancement Mode MOSFET

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Description

Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS.

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Datasheet preview – HY3410NA2P

Datasheet Details

Part number HY3410NA2P
Manufacturer HUAYI
File Size 1.33 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY3410NA2P Datasheet
Additional preview pages of the HY3410NA2P datasheet.

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HY3410NA2P Feature  100V/140A RDS(ON)=5.7mΩ (typ.) @ VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Available (RoHS Compliant) Applications  Power Switching application  Uninterruptible Power Supply  Motor Control N-Channel Enhancement Mode MOSFET Pin Description TO-220FB-3L Ordering and Marking Information P HY3410 XYMXXXXXX N-Channel MOSFET Package Code P :TO-220FB-3L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
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