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HY3503C2 - N-Channel Enhancement Mode MOSFET

Description

z 30V/150A RDS(ON)= 2.0mΩ(typ.) @VGS = 10V RDS(ON)= 2.7mΩ(typ.) @VGS = 4.5V z 100% Avalanche Tested z Reliable and Rugged z Halogen- Free Devices Available Pin Description D DD D D DD D SSSG GSSS Pin1 PPAK5 6-8L Applications Switching Application Power Management for DC/DC

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Datasheet Details

Part number HY3503C2
Manufacturer HUAYI
File Size 623.28 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY3503C2 Datasheet
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HY3503C2 Single N-Channel Enhancement Mode MOSFET Feature Description z 30V/150A RDS(ON)= 2.0mΩ(typ.) @VGS = 10V RDS(ON)= 2.7mΩ(typ.) @VGS = 4.5V z 100% Avalanche Tested z Reliable and Rugged z Halogen- Free Devices Available Pin Description D DD D D DD D SSSG GSSS Pin1 PPAK5*6-8L Applications  Switching Application  Power Management for DC/DC  Battery Protection Ordering and Marking Information N-Channel MOSFET C2 HY3503 YYXXXJWW G Package Code C2: PPAK5*6-8L Date Code YYXXX WW Assembly Material G:Halogen Free Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.
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