z 30V/150A RDS(ON)= 2.0mΩ(typ.) @VGS = 10V RDS(ON)= 2.7mΩ(typ.) @VGS = 4.5V
z 100% Avalanche Tested z Reliable and Rugged z Halogen- Free Devices Available
Pin Description
D DD D
D DD D
SSSG
GSSS
Pin1 PPAK5
6-8L
Applications
Switching Application
Power Management for DC/DC
Full PDF Text Transcription for HY3503C2 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
HY3503C2. For precise diagrams, and layout, please refer to the original PDF.
HY3503C2 Single N-Channel Enhancement Mode MOSFET Feature Description z 30V/150A RDS(ON)= 2.0mΩ(typ.) @VGS = 10V RDS(ON)= 2.7mΩ(typ.) @VGS = 4.5V z 100% Avalanche Tested ...
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) @VGS = 10V RDS(ON)= 2.7mΩ(typ.) @VGS = 4.5V z 100% Avalanche Tested z Reliable and Rugged z Halogen- Free Devices Available Pin Description D DD D D DD D SSSG GSSS Pin1 PPAK5*6-8L Applications Switching Application Power Management for DC/DC Battery Protection Ordering and Marking Information N-Channel MOSFET C2 HY3503 YYXXXJWW G Package Code C2: PPAK5*6-8L Date Code YYXXX WW Assembly Material G:Halogen Free Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.
HY3503C2 Datasheet
