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HY3810B6 Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: HUAYI

Overview: HY3810B6 N-Channel Enhancement Mode MOSFET Feature  100V/218A RDS(ON)= 3.7mΩ(typ.

Datasheet Details

Part number HY3810B6
Manufacturer HUAYI
File Size 877.45 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet HY3810B6-HUAYI.pdf

General Description

Pin7 Pin1 TO-263-6L Pin4 Applications  Switch application  Brushless Motor Drive Ordering and Marking Information B6 HY3810 YYXXXJWW G Pin1 Pin2,3,5,6,7 N-Channel MOSFET Package Code B6:TO-263-6L Date Code YYXXX WW Assembly Material G:Halogen Free Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termi-Nation finish;which are fully pliant with RoHS.

HUAYI lead-free products meet or exceed the leadFree require-ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.

HUAYI defines “Green” to mean lead-free (RoHS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

HY3810B6 Distributor