HY5208W - N-Channel Enhancement Mode MOSFET

HUAYI

General Description

S D G TO-247A-3L S D G TO-3P-3L Applications

Power Management for Inverter Systems.

Key Features

80V/320A RDS(ON)=1.7 m  (typ. ) @ VGS=10V.
Avalanche Rated.
Reliable and Rugged.
Lead Free and Green Devices Available (RoHS Compliant) Pin.

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HY5208W n-channel enhancement mode mosfet by HUAYI - Datasheet Preview

Datasheet Details

Part number	HY5208W
Manufacturer	HUAYI
File Size	633.17 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	HY5208W Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HY5208W/A N-Channel Enhancement Mode MOSFET Features • 80V/320A RDS(ON)=1.7 m  (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description S D G TO-247A-3L S D G TO-3P-3L Applications  Power Management for Inverter Systems. Ordering and Marking Information N-Channel MOSFET W HY5208 YYXXXJWW G A HY5208 YYXXXJWW G Package Code W : TO-247A-3L A : TO-3P-3L Date Code YYXXX WW Assembly Material G : Lead Free Device Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate Termination finish;which are fully compliant with RoHS.