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HYG006N04LS1TA Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: HUAYI

Overview: HYG006N04LS1TA Feature  40V/600A RDS(ON)=0.45 mΩ(typ.)@VGS = 10V RDS(ON)=0.61 mΩ(typ.)@VGS = 4.

Datasheet Details

Part number HYG006N04LS1TA
Manufacturer HUAYI
File Size 871.77 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet HYG006N04LS1TA-HUAYI.pdf

General Description

Tab Pin 8 Pin 1 TOLL Applications  Switching application  Power management for inverter systems  Battery management Ordering and Marking Information Tab Pin 1 Pin 2,3,4,5,6,7,8 N-Channel MOSFET TA G006N04 XYMXXXXXX Package Code TA:TOLL Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully pliant with RoHS.

HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.

HUAYI defines “Green” to mean lead-free (RoHS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

HYG006N04LS1TA Distributor