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HYG007N03LS1C2
Single N-Channel Enhancement Mode MOSFET
Feature Description
30V/220A RDS(ON)= 0.63mΩ (typ.) @VGS = 10V RDS(ON)= 0.96 mΩ (typ.) @VGS = 4.5V
100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available
Pin Description
DDDD
DDDD
SSSG
GSSS
Pin1 PDFN5*6-8L
Applications
Switching Application Power Management for DC/DC Battery Protection
Single N-Channel MOSFET
Ordering and Marking Information
C2
G007N03
XYMXXXXXX
Package Code C2: PDFN5*6-8L
Date Code XYMXXXXXX
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.
HYG007N03LS1C2 Datasheet
