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HYG014N03LR1B - N-Channel Enhancement Mode MOSFET

Download the HYG014N03LR1B datasheet PDF. This datasheet also covers the HYG014N03LR1P variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

TO-220FB-3L TO-263-2L Applications Battery Protection Power management for inverter systems Ordering and Marking Information N-Channel MOSFET P P G014N03 XYMXXXXXX B G014N03 XYMXXXXXX Package Code P:TO-220FB-3L Date Code XYMXXXXXX B : TO-263-2L Note: HUAYI lead-free products

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HYG014N03LR1P-HUAYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HYG014N03LR1B
Manufacturer HUAYI
File Size 901.72 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG014N03LR1B Datasheet

Other Datasheets by HUAYI

Part Number Description
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HYG013N04NR1B6 N-Channel Enhancement Mode MOSFET
HYG015N03LR1B N-Channel Enhancement Mode MOSFET
HYG015N03LR1P N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HYG014N03LR1P/B Feature  30V/275A RDS(ON)=1.3mΩ(typ.)@VGS = 10V RDS(ON)=1.6mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green DevicesAvailable (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description TO-220FB-3L TO-263-2L Applications  Battery Protection  Power management for inverter systems Ordering and Marking Information N-Channel MOSFET P P G014N03 XYMXXXXXX B G014N03 XYMXXXXXX Package Code P:TO-220FB-3L Date Code XYMXXXXXX B : TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.