• Part: HYG014N03LR1B
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HUAYI
  • Size: 901.72 KB
Download HYG014N03LR1B Datasheet PDF
HUAYI
HYG014N03LR1B
Feature - 30V/275A RDS(ON)=1.3mΩ(typ.)@VGS = 10V RDS(ON)=1.6mΩ(typ.)@VGS = 4.5V - 100% Avalanche Tested - Reliable and Rugged - Lead-Free and Green Devices Available (Ro HS pliant) N-Channel Enhancement Mode MOSFET Pin Description TO-220FB-3L TO-263-2L Applications - Battery Protection - Power management for inverter systems Ordering and Marking Information N-Channel MOSFET G014N03 XYMXXXXXX G014N03 XYMXXXXXX Package Code P:TO-220FB-3L Date Code XYMXXXXXX B : TO-263-2L Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termi Nation finish;which are fully pliant with Ro HS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI...