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HYG015N03LR1B Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: HUAYI

Overview: HYG015N03LR1P/B Feature  30V/170A RDS(ON)=1.8mΩ(typ.)@VGS=10V RDS(ON)=2.4mΩ(typ.)@VGS=4.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

TO-220FB-3L TO-263-2L Applications  Power Switching application  Battery Protection Ordering and Marking Information P G015N03 XYMXXXXXX B G015N03 XYMXXXXXX N-Channel MOSFET Package Code P :TO-220FB-3L Date Code XYMXXXXXX B:TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish;

which are fully compliant with RoHS.

HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.

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