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HYG015N04LS1C2 Datasheet Single N-channel Enhancement Mode MOSFET

Manufacturer: HUAYI

Overview: HYG015N04LS1C2 Single N-Channel Enhancement Mode MOSFET Feature.

Datasheet Details

Part number HYG015N04LS1C2
Manufacturer HUAYI
File Size 601.47 KB
Description Single N-Channel Enhancement Mode MOSFET
Datasheet HYG015N04LS1C2-HUAYI.pdf

General Description

 40V/150A RDS(ON)= 1.4mΩ (typ.) @VGS = 10V RDS(ON)= 2.0mΩ (typ.) @VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen- Free Devices Available Pin Description DDDD DDDD SSSG GSSS Pin1 PDFN5*6-8L Applications  Switching Application  Power Management for DC/DC  Battery Protection Single N-Channel MOSFET Ordering and Marking Information C2 G015N04 XYMXXXXXX Package Code C2: PDFN5*6-8L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.

HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.

HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

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