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HYG016N10NS1TA Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: HUAYI

Overview: HYG016N10NS1TA N-Channel Enhancement Mode MOSFET Feature  100V/370A RDS(ON)=1.35mΩ(typ.

Datasheet Details

Part number HYG016N10NS1TA
Manufacturer HUAYI
File Size 589.96 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet HYG016N10NS1TA-HUAYI.pdf

General Description

Tab Pin 8 Pin 1 TOLL Tab Pin 1 Pin 2,3,4,5,6,7,8 N-Channel MOSFET TA G016N10 XYMXXXXXX Package Code TA:TOLL Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.

HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.

HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

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