Datasheet4U Logo Datasheet4U.com

HYG016N10NS1TA - N-Channel Enhancement Mode MOSFET

General Description

Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.

📥 Download Datasheet

Datasheet Details

Part number HYG016N10NS1TA
Manufacturer HUAYI
File Size 589.96 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG016N10NS1TA Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HYG016N10NS1TA N-Channel Enhancement Mode MOSFET Feature  100V/370A RDS(ON)=1.35mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoHS Compliant) Applications  Switching application  Power management for inverter systems  Battery management Ordering and Marking Information Pin Description Tab Pin 8 Pin 1 TOLL Tab Pin 1 Pin 2,3,4,5,6,7,8 N-Channel MOSFET TA G016N10 XYMXXXXXX Package Code TA:TOLL Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.