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HYG028N10NS1W - N-Channel Enhancement Mode MOSFET

General Description

Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS.

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Datasheet Details

Part number HYG028N10NS1W
Manufacturer HUAYI
File Size 1.38 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG028N10NS1W Datasheet

Full PDF Text Transcription (Reference)

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HYG028N10NS1W N-Channel Enhancement Mode MOSFET Feature  100V/240A RDS(ON)=2.5mΩ (typ.) @ VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free and Green Devices Available (RoHS Compliant) Applications  Power Switching application  Uninterruptible Power Supply  Motor Control Pin Description TO-247A-3L Ordering and Marking Information W G028N10 XYMXXXXXX N-Channel MOSFET Package Code W :TO-247A-3L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.