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HYG028N10NS1W Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: HUAYI

Overview: HYG028N10NS1W N-Channel Enhancement Mode MOSFET Feature  100V/240A RDS(ON)=2.5mΩ (typ.

Datasheet Details

Part number HYG028N10NS1W
Manufacturer HUAYI
File Size 1.38 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet HYG028N10NS1W-HUAYI.pdf

General Description

TO-247A-3L Ordering and Marking Information W G028N10 XYMXXXXXX N-Channel MOSFET Package Code W :TO-247A-3L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish;

which are fully compliant with RoHS.

HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.

HYG028N10NS1W Distributor