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HYG035N04LR1D Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: HUAYI

Overview: HYG035N04LR1D Single N-Channel Enhancement Mode MOSFET Feature  40V/93A RDS(ON)= 3.0 mΩ(typ.) @VGS = 10V RDS(ON)= 4.0 mΩ(typ.) @VGS = 4.

Datasheet Details

Part number HYG035N04LR1D
Manufacturer HUAYI
File Size 1.32 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet HYG035N04LR1D-HUAYI.pdf

General Description

S GD Applications  Load Switch  Uninterrupted Power Supply  Lithium battery protect board Ordering and Marking Information Single N-Channel MOSFET D G035N04 XYMXXXXXX Package Code D: TO-252-2L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully pliant with RoHS.

HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.

HUAYI defines “Green” to mean lead-free (RoHS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

HYG035N04LR1D Distributor