Datasheet Details
| Part number | HYG035N10NS2B |
|---|---|
| Manufacturer | HUAYI |
| File Size | 667.01 KB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet | HYG035N10NS2B HYG035N10NS2P Datasheet (PDF) |
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Overview: HYG035N10NS2P/B Feature 100V/180A RDS(ON)=3.2mΩ(typ.) @ VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available (RoHS pliant) Applications Power Switching application DC-DC.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | HYG035N10NS2B |
|---|---|
| Manufacturer | HUAYI |
| File Size | 667.01 KB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet | HYG035N10NS2B HYG035N10NS2P Datasheet (PDF) |
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TO-220FB-3L TO-263-2L Ordering and Marking Information P G035N10 XYMXXXXXX B G035N10 XYMXXXXXX N-Channel MOSFET Package Code P :TO-220FB-3L Date Code XYMXXXXXX B:TO-263-2L Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plateTermiNation finish;
which are fully pliant with RoHS.
HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
| Part Number | Description |
|---|---|
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| HYG035N10NS1P | N-Channel Enhancement Mode MOSFET |
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| HYG030N03LQ1P | N-Channel Enhancement Mode MOSFET |
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| HYG032N08NS1B6 | N-Channel Enhancement Mode MOSFET |