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HYG035N10NS2B Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: HUAYI

Overview: HYG035N10NS2P/B Feature  100V/180A RDS(ON)=3.2mΩ(typ.) @ VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Available (RoHS pliant) Applications  Power Switching application  DC-DC.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

TO-220FB-3L TO-263-2L Ordering and Marking Information P G035N10 XYMXXXXXX B G035N10 XYMXXXXXX N-Channel MOSFET Package Code P :TO-220FB-3L Date Code XYMXXXXXX B:TO-263-2L Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plateTermiNation finish;

which are fully pliant with RoHS.

HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.

HYG035N10NS2B Distributor