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HYG037N04LR1D Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: HUAYI

Overview: HYG037N04LR1D Single N-Channel Enhancement Mode MOSFET Feature  40V/80A RDS(ON)= 3.8 mΩ (typ.) @VGS = 10V RDS(ON)= 6.1 mΩ (typ.) @VGS = 4.

Datasheet Details

Part number HYG037N04LR1D
Manufacturer HUAYI
File Size 775.12 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet HYG037N04LR1D-HUAYI.pdf

General Description

G DS Applications  Load Switch  Lithium battery protect board Single N-Channel MOSFET Ordering and Marking Information D G037N04 XYMXXXXXX Package Code D: TO-252-2L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully pliant with RoHS.

HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.

HUAYI defines “Green” to mean lead-free (RoHS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

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