Datasheet Details
| Part number | HYG050N10NS1P |
|---|---|
| Manufacturer | HUAYI |
| File Size | 1.31 MB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet | HYG050N10NS1P-HUAYI.pdf |
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Overview: HYG050N10NS1P Feature 100V/135A RDS(ON)=4.4mΩ (typ.) @ VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available (RoHS Compliant) Applications Power Switching application .
| Part number | HYG050N10NS1P |
|---|---|
| Manufacturer | HUAYI |
| File Size | 1.31 MB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet | HYG050N10NS1P-HUAYI.pdf |
|
|
|
TO-220FB-3L Ordering and Marking Information P G050N10 XYMXXXXXX N-Channel MOSFET Package Code P :TO-220FB-3L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish;
which are fully compliant with RoHS.
HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
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