Datasheet Details
| Part number | HYG050N13NS1B |
|---|---|
| Manufacturer | HUAYI |
| File Size | 1.37 MB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet | HYG050N13NS1B HYG050N13NS1P Datasheet (PDF) |
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Overview: HYG050N13NS1P/B Feature 135V/200A RDS(ON)=4.0mΩ(typ.) @ VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available (RoHS Compliant) Applications Power Switching application .
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | HYG050N13NS1B |
|---|---|
| Manufacturer | HUAYI |
| File Size | 1.37 MB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet | HYG050N13NS1B HYG050N13NS1P Datasheet (PDF) |
|
|
|
TO-220FB-3L TO-263-2L Ordering and Marking Information P G050N13 XYMXXXXXX B G050N13 XYMXXXXXX N-Channel MOSFET Package Code P :TO-220FB-3L Date Code XYMXXXXXX B:TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish;
which are fully compliant with RoHS.
HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
HYG050N13NS1B6 | N-Channel Enhancement Mode MOSFET | HOOYI |
| Part Number | Description |
|---|---|
| HYG050N13NS1P | N-Channel Enhancement Mode MOSFET |
| HYG050N10NS1P | N-Channel Enhancement Mode MOSFET |
| HYG050N08NS1B | N-Channel Enhancement Mode MOSFET |
| HYG050N08NS1C2 | N-Channel Enhancement Mode MOSFET |
| HYG050N08NS1P | N-Channel Enhancement Mode MOSFET |
| HYG053N10NS1B | N-Channel MOSFET |
| HYG053N10NS1C2 | N-Channel Enhancement Mode MOSFET |
| HYG053N10NS1P | N-Channel MOSFET |
| HYG055N08NS1B | N-Channel Enhancement Mode MOSFET |
| HYG055N08NS1C2 | N-Channel Enhancement Mode MOSFET |