Download the HYG055N08NS1B datasheet PDF.
This datasheet also covers the HYG055N08NS1P variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
DS G TO-220FB- 3L
G DS TO-263-2L
Applications
Switching application
Power management for inverter systems
Motor control
N-Channel MOSFET
Ordering and Marking Information
P
G055N08
XYMXXXXXX
B
G055N08
XYMXXXXXX
Package Code P :TO-220FB-3L
Date Code XYMXXXXXX
B : TO-263-2L
Full PDF Text Transcription for HYG055N08NS1B (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
HYG055N08NS1B. For precise diagrams, and layout, please refer to the original PDF.
HYG055N08NS1P/B Feature 80V/120A RDS(ON)=5.3 mΩ(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green DevicesAvailable (RoHS Compliant) N-...
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and Rugged Lead-Free and Green DevicesAvailable (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description DS G TO-220FB- 3L G DS TO-263-2L Applications Switching application Power management for inverter systems Motor control N-Channel MOSFET Ordering and Marking Information P G055N08 XYMXXXXXX B G055N08 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX B : TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.
HYG055N08NS1B Datasheet
