• Part: HYG063N09NS1P
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HUAYI
  • Size: 391.03 KB
Download HYG063N09NS1P Datasheet PDF
HUAYI
HYG063N09NS1P
Feature - 90V/120A RDS(ON)=5.5 mΩ(typ.)@VGS = 10V - 100% Avalanche Tested - Reliable and Rugged - Halogen-Free Devices Available (Ro HS pliant) N-Channel Enhancement Mode MOSFET Pin Description TO-220FB-3L Applications - Switching application - Power management for inverter systems - Battery management N-Channel MOSFET Ordering and Marking Information G063N09 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termi Nation finish;which are fully pliant with Ro HS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements,...