• Part: HYG067N07NQ1U
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HUAYI
  • Size: 1.33 MB
Download HYG067N07NQ1U Datasheet PDF
HUAYI
HYG067N07NQ1U
Feature - 68V/70A RDS(ON)= 6.8mΩ(typ.)@VGS = 10V - 100% Avalanche Tested - Reliable and Rugged - Halogen Free and Green Devices Available (Ro HS pliant) Pin Description G DS G DS S GD TO-252-2L TO-251-3L TO-251-3S Applications - Portable equipment and battery powered systems - DC-DC Converters - Switching application Ordering and Marking Information N-Channel MOSFET D G067N07 XYMXXXXXX U G067N07 XYMXXXXXX V G067N07 XYMXXXXXX Package Code D: TO-252-2L V: TO-251-3S Date Code XYMXXXXXX U: TO-251-3L Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termi Nation finish; which are fully pliant with Ro HS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed...