• Part: HYG068N08NR1P
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HUAYI
  • Size: 724.27 KB
Download HYG068N08NR1P Datasheet PDF
HUAYI
HYG068N08NR1P
Feature - 80V/160A RDS(ON)= 6mΩ(typ.)@VGS = 10V - 100% Avalanche Tested - Reliable and Rugged - Lead- Free Devices Available (Ro HS pliant) Applications - Power management in Inverter System - Electric vehicle controllers - Lithium battery protection board - Switching Application Ordering and Marking Information Pin Description TO-220FB-3L N-Channel MOSFET G068N08N XXXYWXXXXX Package Code P: TO-220FB-3L Date Code XXXYWXXXXX Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termi Nation finish;which are fully pliant with Ro HS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections,...