• Part: HYG080N10LS1C2
  • Description: Single N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HUAYI
  • Size: 887.20 KB
Download HYG080N10LS1C2 Datasheet PDF
HUAYI
HYG080N10LS1C2
Feature - 100V/65A RDS(ON)= 6.9 mΩ (typ.) @ VGS = 10V RDS(ON)= 9.4 mΩ (typ.) @ VGS = 4.5V - 100% Avalanche Tested - Reliable and Rugged - Halogen- Free Devices Available (Ro HS pliant) Pin Description DDDD DDDD SSSG GSSS Pin1 PDFN5- 6-8L Applications - High Frequency Point-of-Load Synchronous Buck Converter - Power Tool Application - Networking DC-DC Power System Ordering and Marking Information Single N-Channel MOSFET C2 G080N10 XYMXXXXXX Package Code C2: PDFN5- 6-8L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termi Nation finish; which are fully pliant with Ro HS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by...