Datasheet4U Logo Datasheet4U.com

HYG080ND03LA1S - Dual N-Channel Enhancement Mode MOSFET

General Description

SOP8L Applications Power Management for DC/DC Switching Application Wireless Power Ordering and Marking Information S G080ND03L XXXYWXXXXX Dual N-Channel MOSFET Package Code S: SOP8L Date Code XXXYWXXXXX Note:HUAYI lead-free products contain molding compounds/die attach material

📥 Download Datasheet

Datasheet Details

Part number HYG080ND03LA1S
Manufacturer HUAYI
File Size 1.35 MB
Description Dual N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG080ND03LA1S Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HYG080ND03LA1S Dual N-Channel Enhancement Mode MOSFET Feature  30V/11A RDS(ON)=9.5 mΩ(typ.)@VGS = 10V RDS(ON)=12.5 mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen Free and Green Devices Available (RoHS Compliant) Pin Description SOP8L Applications  Power Management for DC/DC  Switching Application  Wireless Power Ordering and Marking Information S G080ND03L XXXYWXXXXX Dual N-Channel MOSFET Package Code S: SOP8L Date Code XXXYWXXXXX Note:HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNationfinish;which are fully compliant with RoHS.HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.