• Part: HYG082N03LR1C1
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HUAYI
  • Size: 735.71 KB
Download HYG082N03LR1C1 Datasheet PDF
HUAYI
HYG082N03LR1C1
Feature - 30V/32A RDS(ON)= 7.0mΩ(typ.) @VGS = 10V RDS(ON)= 10.5 mΩ(typ.) @VGS = 4.5V - 100% Avalanche Tested - Reliable and Rugged - Halogen Free and Green Devices Available (Ro HS pliant) Pin Description DDDD DDDD SSSG Pin1 GSSS DFN3- 3-8L Applications - Power Management for DC/DC - Switching Application - Battery Protection Ordering and Marking Information Single N-Channel MOSFET C1 G082N03 XYMXXXXX Package Code C1: DFN3- 3-8L Date Code XYMXXXXX Note:HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termi Nationfinish;which are fully pliant with Ro HS.HUAYI lead-free products meet or exceed the lead-Free require- ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make...