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HYG090N06LS1P - N-Channel Enhancement Mode MOSFET

General Description

TO-220FB-3L TO-263-2L Ordering and Marking Information P G090N06 XYMXXXXXX B G090N06 XYMXXXXXX N-Channel MOSFET Package Code P :TO-220FB-3L Date Code XYMXXXXXX B :TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation fini

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Datasheet Details

Part number HYG090N06LS1P
Manufacturer HUAYI
File Size 827.45 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG090N06LS1P Datasheet

Full PDF Text Transcription for HYG090N06LS1P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HYG090N06LS1P. For precise diagrams, and layout, please refer to the original PDF.

HYG090N06LS1P/B N-Channel Enhancement Mode MOSFET Feature  60V/62A RDS(ON)= 8.1mΩ (typ.) @ VGS = 10V RDS(ON)= 11.8 mΩ (typ.) @ VGS = 4.5V  100% Avalanche Tested  Relia...

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V RDS(ON)= 11.8 mΩ (typ.) @ VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen- Free Devices Available (RoHS Compliant) Applications  High Frequency Point-of-Load Synchronous Buck Converter  Power Tool Application  Networking DC-DC Power System Pin Description TO-220FB-3L TO-263-2L Ordering and Marking Information P G090N06 XYMXXXXXX B G090N06 XYMXXXXXX N-Channel MOSFET Package Code P :TO-220FB-3L Date Code XYMXXXXXX B :TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS.