• Part: HYG090ND06LS1C2
  • Description: Dual N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HUAYI
  • Size: 796.88 KB
Download HYG090ND06LS1C2 Datasheet PDF
HUAYI
HYG090ND06LS1C2
Feature - 60V/56A RDS(ON)= 8.0 mΩ(typ.) @VGS = 10V RDS(ON)= 12.2 mΩ(typ.) @VGS = 4.5V - 100% Avalanche Tested - Reliable and Rugged - Halogen Free and Green Devices Available (Ro HS pliant) Pin Description PIN1 PDFN8L(5x6) Applications - Switching Application - Power Management for DC/DC Ordering and Marking Information C2 G090ND06 XXXYWXXXXX Dual N-Channel MOSFET Package Code C2: PDFN8L(5x6) Date Code XXXYWXXXXX Note:HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termi Nationfinish;which are fully pliant with Ro HS.HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements,...