• Part: HYG090P03LA1C1
  • Description: P-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HUAYI
  • Size: 602.28 KB
Download HYG090P03LA1C1 Datasheet PDF
HUAYI
HYG090P03LA1C1
Feature z -30V/-40A RDS(ON)= 7.9 mΩ (typ.) @VGS = -10V RDS(ON)= 10.5 mΩ (typ.) @VGS = -4.5V z 100% Avalanche Tested z Reliable and Rugged z Halogen Free and Green Devices Available (Ro HS pliant) Pin Description DDDD Pin1 GSSS DFN3- 3-8L Applications z Switching Application z Lithium battery protect board Ordering and Marking Information Single P-Channel MOSFET C1 G090P03 XYMXXXXXX Package Code C1: DFN3- 3-8L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termi- Nation finish;which are fully pliant with Ro HS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes,...