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HYG120P06LR1D - P-Channel Enhancement Mode MOSFET

General Description

TO-252-2L TO-251-3L TO-251-3S Applications

Power Management in DC/DC converter.

Load switching.

Motor control.

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Datasheet Details

Part number HYG120P06LR1D
Manufacturer HUAYI
File Size 1.44 MB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG120P06LR1D Datasheet

Full PDF Text Transcription for HYG120P06LR1D (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HYG120P06LR1D. For precise diagrams, and layout, please refer to the original PDF.

HYG120P06LR1D/U/V P-Channel Enhancement Mode MOSFET Feature  -60V/-55A RDS(ON)= 12.5mΩ (typ.) @ VGS = -10V RDS(ON)= 18mΩ (typ.) @ VGS = -4.5V  100% avalanche tested  R...

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= -10V RDS(ON)= 18mΩ (typ.) @ VGS = -4.5V  100% avalanche tested  Reliable and Rugged  Halogen Free and Green Devices Available (RoHS Compliant) Pin Description TO-252-2L TO-251-3L TO-251-3S Applications  Power Management in DC/DC converter.  Load switching.  Motor control. Ordering and Marking Information D G120P06L XYMXXXXXX U G120P06L XYMXXXXXX V G120P06L XYMXXXXXX Package Code D: TO-252-2L V: TO-251-3S Date Code XYMXXXXXX P-Channel MOSFET U: TO-251-3L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS.

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