Datasheet Details
| Part number | HYG180N10LS1C2 |
|---|---|
| Manufacturer | HUAYI |
| File Size | 1.44 MB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet | HYG180N10LS1C2-HUAYI.pdf |
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Overview: HYG180N10LS1C2 N-Channel Enhancement Mode MOSFET Feature 100V/46A RDS(ON)=16.5mΩ (typ.) @ VGS = 10V RDS(ON)=20mΩ (typ.
| Part number | HYG180N10LS1C2 |
|---|---|
| Manufacturer | HUAYI |
| File Size | 1.44 MB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet | HYG180N10LS1C2-HUAYI.pdf |
|
|
|
DDDD DDDD SSSG GSSS Pin1 PDFN8L（5x6） Ordering and Marking Information C2 G180N10 XYMXXXXXX N-Channel MOSFET Package Code C2 :PDFN8L（5x6） Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish;
which are fully compliant with RoHS.
HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
Compare HYG180N10LS1C2 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
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