Download the HYG3208NA3B datasheet PDF.
This datasheet also covers the HYG3208NA3P variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
TO-220FB-3L
TO-263-2L
Applications
Switching application
Power management for inverter system
N-Channel MOSFET
Ordering and Marking Information
P HY3208
XYMXXXXXX
B HY3208
XYMXXXXXX
Package Code P :TO-220FB-3L
Date Code XYMXXXXXX
B:TO-263-2L
Note: HUAYI lead-free products conta
Full PDF Text Transcription for HYG3208NA3B (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
HYG3208NA3B. For precise diagrams, and layout, please refer to the original PDF.
HYG3208NA3P/B Feature 80V/120A RDS(ON)= 7mΩ(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green DevicesAvailable (RoHS Compliant) N-Chan...
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Rugged Lead-Free and Green DevicesAvailable (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description TO-220FB-3L TO-263-2L Applications Switching application Power management for inverter system N-Channel MOSFET Ordering and Marking Information P HY3208 XYMXXXXXX B HY3208 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX B:TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classificatio
HYG3208NA3B Datasheet
