HVV1214-025S - RF Transistor

General Description

The high power HVV1214-25 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed radar applications operating over the frequency range from 1.2 GHz to 1.4 GHz.

Key Features

High Power Gain.
Excellent Ruggedness.
48V Supply Voltage.

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HVV1214-025S rf transistor by HVVi - Datasheet Preview

Datasheet Details

Part number	HVV1214-025S
Manufacturer	HVVi
File Size	221.77 KB
Description	RF Transistor
Datasheet	HVV1214-025S Datasheet

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Other Datasheets by HVVi

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HVV1214-025 L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty The innovative Semiconductor Company! DESCRIPTION The high power HVV1214-25 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed radar applications operating over the frequency range from 1.2 GHz to 1.4 GHz. FEATURES • High Power Gain • Excellent Ruggedness • 48V Supply Voltage ABSOLUTE MAXIMUM RATINGS Symbol VDSS VGS IDSX PD2 TS TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation Storage Temperature Junction Temperature Value 105 10 2 116 -65 to +200 200 Unit V V A W °C °C THERMAL CHARACTERISTICS Symbol Parameter θJC1 Thermal Resistance Max 1.