Description
The HX8N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.
Features
- RDS(ON)=1.2Ω@VGS=10V.
- Ultra Low gate charge(typical 28nC).
- Low reverse transfer capacitance(Crss=typical 12.0pF).
- Fast switching capability.
- Avalanche energy tested.
- Improved dv/dt capability,high ruggedness.
- Symbol
Power MOSFET.
- Ordering Information
Order Number
Normal
Lead Free Plating
HX8N60-TA3-T
HX8N60L-TA3-T
HX8N60-TF3-T
HX8N60L-TF3-T
Note:Pin Assignment: G:Gate D:Drain S:Source
HX8N60L-TA3-T
（1）Packing Type （2）Package Type
（3）Lead Plati.
HX8N60 Datasheet
