HX8N60 Overview
The HX8N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually usually used at high speed switching applications in power supplies .PWM motor controls, high efficient DC to DC converters and bridge circuits.
HX8N60 Key Features
- RDS(ON)=1.2Ω@VGS=10V
- Ultra Low gate charge(typical 28nC)
- Low reverse transfer capacitance(Crss=typical 12.0pF)
- Fast switching capability
- Avalanche energy tested
- Improved dv/dt capability,high ruggedness
- Symbol
- Ordering Information