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SOT-23 Plastic-Encapsulate Transistors
HX2301 MOSFET(P-Channel)
FEATURES
PWM applications Load switch Power management MARKING: A1SHB
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VDS Drain-Source voltage
-20 V
VGS Gate-Source voltage
±12
V
ID Drain current
-2.3 A
PD Power Dissipation
0.9 W
Tj Junction Temperature
150 ℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Drain-Source Breakdown Voltage
V(BR)DSS VGS=0V,ID=-250uA
-20
V
Gate-Threshold Voltage Gate-body Leakage Zero Gate Voltage Drain Current
Drain-Source On-Resistance
Vth(GS) IGSS IDSS
rDS(ON)
VDS= VGS, ID=-250 uA VDS=0V, VGS=±12V VDS=-20V, VGS=0V VGS=-4.5V, ID=-2.
HX2301 Datasheet