SQ1260 Datasheet | HY ELECTRONIC

FEATURES - Metal of silicon rectifier , majority carrier conduction - Guard ring for transient protection - Low power loss,high efficiency - High current capability,low VF - High surge capacity - For use in low voltage,high frequency inverters,free wheeling,and polarity protection applications .375(9.5) .335(8.5) 1.0(25.4) MIN. .052(1.3) .048(1.2) DIA. .220(5.6) .197(5.0) DIA. MECHANICAL DATA - Case: JEDEC DO-27 molded plastic - Polarity: Color band denotes cathode - Weight: 0.04ounces , 1.1grams TC measurement point 1.0(25.4) MIN. - Mounting position: Any Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25℃ ambient temperature unless otherwise specified. Single phase, half wave ,60Hz, resistive or inductive load. For capacitive load, derate current by 20% CHARACTERISTICS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current @Tc=95 ℃ SYMBOL SQ1230 SQ1235 SQ1240 SQ1245 SQ1250 SQ1260 SQ1280 SQ12100 UNIT VRRM VRMS VDC I(AV) 30 21 30 35 24.5 35 40 28 40 45 31.5 45 12 50 35 50 60 42 60 80 56 80 100 70 100 V V V A Peak Forward Surge Current 8.3ms single half sinewave super imposed on rated load(JEDEC Method) Peak Forward Voltage at 12A DC(Note1) Maximum DC Reverse Current @Tj=25℃ at Rated DC Bolcking Voltage @Tj=100℃ Tyical Junction Capacitance (Note2) Tyical Thermal Resistance (Note3) Operating Temperature Range Storage Temperature Range NOTES:1.300us Pulse Width, 2%Duty Cycle. IFSM VF IR CJ RθJC TJ TSTG 0.55 275 0.7 0.5 50 450 3.0 -55 to+200 -55 to+200 0.8 A V m A p F ℃/w ℃ ℃ 2.Measured at 1.0 MHZ and applied reverse voltage of 4.0VDC. 3.Thermal Resistance Junction to case. ~ 214 ~ Free Datasheet http://../ RATING AND CHARACTERTIC CURVES SQ1230 thru SQ12100 FIG.1-FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT AMPERES 12.0 10.0 8.0 6.0 4.0 2.0 0 SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD PEAK FORWARD SURGE CURRENT...