Datasheet Summary
AD100-8 TO52S1
Avalanche Photodiode
Special characteristics: high gain at low bias voltage fast rise time
100 µm diameter active area low capacitance
Parameters: (at 20 ±2°C)
Active Area
Dark Current 1) (M=100) Total Capacitance 1) (M=100) Breakdown Voltage UBR (at ID=2µA) Temperature Coefficient of UBR
Spectral Responsivity (at 800 nm, at M=100) Cut-off Frequency (-3dB)
Rise Time Optimum Gain Max. Gain "Exess Noise" factor (M=100) "Exess Noise" index (M=100) Noise Current (M=100) N.E.P. (M=100, 800 nm)
Operating Temperature Storage Temperature
0.00785 mm2 ∅ 100 µm max. 0.1 nA typ. 50 pA typ. 0.8 pF
- 190 V 0.35 … 0.55 V/K typ. 0.45 V/K min. 45 A/W typ. 50 A/W
> 2 GHz < 180 ps 50
-...