AD100-8 - Photodiode

Download the AD100-8 datasheet PDF. This datasheet also covers the AD100-8-HY variant, as both devices belong to the same photodiode family and are provided as variant models within a single manufacturer datasheet.

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AD100-8 photodiode by HY-LINE - Datasheet Preview — Note: The manufacturer provides a single datasheet file (AD100-8-HY-LINE.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	AD100-8
Manufacturer	HY-LINE
File Size	310.04 KB
Description	Photodiode
Datasheet	AD100-8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AD100-8 TO52S1 Avalanche Photodiode Special characteristics: high gain at low bias voltage fast rise time 100 µm diameter active area low capacitance Parameters: (at 20 ±2°C) Active Area Dark Current 1) (M=100) Total Capacitance 1) (M=100) Breakdown Voltage UBR (at ID=2µA) Temperature Coefficient of UBR Spectral Responsivity (at 800 nm, at M=100) Cut-off Frequency (-3dB) Rise Time Optimum Gain Max. Gain "Exess Noise" factor (M=100) "Exess Noise" index (M=100) Noise Current (M=100) N.E.P. (M=100, 800 nm) Operating Temperature Storage Temperature 0.00785 mm2 ∅ 100 µm max. 0.1 nA typ. 50 pA typ. 0.8 pF 120 - 190 V 0.35 … 0.55 V/K typ. 0.45 V/K min. 45 A/W typ. 50 A/W > 2 GHz < 180 ps 50 - 60 > 200 typ. 2.2 typ. 0.2 typ. 0.15 pA/Hz½ typ. 3 * 10-15 W/Hz½ -20 ... +70 °C -60 ...