G6849 - InGaAs PIN photodiode

Hamamatsu Corporation

Key Features

Photosensitive area G6849 : φ2 mm quadrant element G6849-01: φ1 mm quadrant element Low noise High reliability.

G6849 ingaas pin photodiode by Hamamatsu Corporation - Datasheet Preview

Datasheet Details

Part number	G6849
Manufacturer	Hamamatsu Corporation
File Size	241.79 KB
Description	InGaAs PIN photodiode
Datasheet	G6849 Datasheet

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Other Datasheets by Hamamatsu Corporation

Part Number	Description
G6849-01	InGaAs PIN photodiode
G6854-01	InGaAs PIN photodiode

Full PDF Text Transcription (Reference)

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InGaAs PIN photodiodes G6849 series Quadrant type Features Photosensitive area G6849 : φ2 mm quadrant element G6849-01: φ1 mm quadrant element Low noise High reliability Applications Light spot position detection Measurement equipment Structure Parameter Photosensitive area Number of elements Package Window material G6849 φ2/quadrant 4 TO-5 Borosilicate glass G6849-01 φ1/quadrant Unit mm - Absolute maximum ratings (Ta=25 °C) Parameter Symbol Value Unit Reverse voltage VR 5 V Operating temperature Topr -40 to +85 °C Storage temperature Tstg -55 to +125 °C Soldering condition - 260 °C or less, within 10 s - Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality.