G6849
G6849 is InGaAs PIN photodiode manufactured by Hamamatsu Corporation.
Features
Photosensitive area G6849 : φ2 mm quadrant element G6849-01: φ1 mm quadrant element Low noise High reliability
Applications
Light spot position detection Measurement equipment
Structure
Parameter Photosensitive area Number of elements Package Window material
G6849 φ2/quadrant
4 TO-5 Borosilicate glass
G6849-01 φ1/quadrant
Unit mm
- Absolute maximum ratings (Ta=25 °C)
Parameter
Symbol
Value
Unit
Reverse voltage
Operating temperature Topr
-40 to +85
°C
Storage temperature
Tstg
-55 to +125
°C
Soldering condition
- 260 °C or less, within 10 s
- Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings.
Electrical and optical characteristics (Ta=25 °C, per 1 element)
Parameter
Spectral response range Peak sensitivity wavelength
Photosensitivity
Dark current Temperature...
