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HMF2M32B4V - FLASH-ROM MODULE

General Description

The HMF2M32B4V is a high-speed flash read only memory (FROM) module containing 4,194,304 words organized in a x32bit configuration.

The module consists of four 1M x 16 FROM mounted on a 72-pin SO-DIMM type, single - sided, FR4printed circuit board.

Key Features

  • w Access time: 70, 80, 90, 120ns w High-density 8MByte design w High-reliability, low-power design w Single + 3.0V ± 0.5V power supply w All in/outputs are LVTTL-compatible w FR4-PCB design w Minimum 1,000,000 write/erase cycle w Sector erases architecture PIN 1 2 3 4 5 6 7 Symbol Vss /RESET DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 Vcc DQ7 /CE_1L /CE_2L DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 PIN 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 PIN.

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Datasheet Details

Part number HMF2M32B4V
Manufacturer Hanbit Electronics
File Size 186.90 KB
Description FLASH-ROM MODULE
Datasheet download datasheet HMF2M32B4V Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HANBit HMF2M32B4V Flash-ROM Module 8MByte (2Mx32Bit), 72Pin-SO-DIMM, 3.3V Design Part No. HMF2M32B4V GENERAL DESCRIPTION The HMF2M32B4V is a high-speed flash read only memory (FROM) module containing 4,194,304 words organized in a x32bit configuration. The module consists of four 1M x 16 FROM mounted on a 72-pin SO-DIMM type, single - sided, FR4printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. www.DataSheet4U.