GENERAL DESCRIPTION
Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. This module is 2 bank organized, each bank containing 4Mx32bit, Bank selection is selected by Bank-E0, Bank-E1 inputs. Byte write enable inputs, (/WE0, /WE1, /WE2, /WE3) are used to enable the module’s 8bits independently. Output enable (/OE) and write enable (/WE) can set the memory input and output. When FROM module is disable condition the module is becoming power standby mode, system designer can get low-power design. All module components may be powered from a single +5V DC power supply and all inputs and outputs are TTL-compatible. FEATURES
w Access time : 75, 90 and 120n...
Hanbit Electronics
